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| BYW52...BYW56 Vishay Telefunken Silicon Mesa Rectifiers Features D D D D D D Controlled avalanche characteristics Glass passivated junction Hermetically sealed package Low reverse current High surge current loading Electrically equivalent diodes: BYW52 - 1N5059 BYW53 - 1N5060 BYW54 - 1N5061 BYW55 - 1N5062 94 9539 Applications Rectifier, general purpose Absolute Maximum Ratings Tj = 25_C Parameter Reverse voltage g =Repetitive peak reverse voltage Test Conditions Type BYW52 BYW53 BYW54 BYW55 BYW56 Symbol VR=VRRM VR=VRRM VR=VRRM VR=VRRM VR=VRRM IFSM IFRM IFAV PR ER i2*t Tj=Tstg Value 200 400 600 800 1000 50 12 2 1000 20 Unit V V V V V A A A W mJ A2*s C Peak forward surge current Repetitive peak forward current Average forward current Pulse avalanche peak power tp=10ms, half sinewave =180 tp=20ms half sinus wave, Tj=175C Pulse energy in avalanche mode, I(BR)R=1A, Tj=175C non repetitive (inductive load switch off) i2* t-rating Junction and storage temperature range 8 -55...+175 Maximum Thermal Resistance Tj = 25_C Parameter Junction ambient Test Conditions l=10mm, TL=constant on PC board with spacing 25mm Symbol RthJA RthJA Value 45 100 Unit K/W K/W Document Number 86049 Rev. 2, 24-Jun-98 www.vishay.de * FaxBack +1-408-970-5600 1 (4) BYW52...BYW56 Vishay Telefunken Electrical Characteristics Tj = 25_C Parameter Forward voltage Reverse current Breakdown voltage Diode capacitance Reverse recovery time y Reverse recovery charge Test Conditions IF=1A VR=VRRM VR=VRRM, Tj=100C IR=100mA, tp/T=0.01, tp=0.3ms VR=0, f=0.47MHz IF=0.5A, IR=1A, iR=0.25A IF=1A, di/dt=5A/ms, VR=50V IF=1A, di/dt=5A/ms Type Symbol VF IR IR V(BR) CD trr trr Qrr Min Typ 0.9 0.1 5 50 4 4 200 Max 1.0 1 10 1600 Unit V mA mA V pF ms ms nC Characteristics (Tj = 25_C unless otherwise specified) R thJA - Therm. Resist. Junction / Ambient ( K/W ) 120 l 100 80 60 40 20 0 0 5 10 15 20 25 30 94 9172 l I FAV- Average Forward Current ( A ) 2.0 1.6 1.2 0.8 0.4 0 0 40 80 120 160 200 TL=constant RthJA l=12mm VR = VR RM v45K/W 94 9101 l - Lead Length ( mm ) Tamb - Ambient Temperature ( C ) Figure 1. Typ. Thermal Resistance vs. Lead Length Figure 3. Max. Average Forward Current vs. Ambient Temperature 1000 I R - Reverse Current ( mA ) 1.2 I FAV- Average Forward Current ( A ) 1.0 0.8 0.6 0.4 0.2 0 0 94 9163 100 Scattering Limit 10 RthJA=100K/W PCB VR = VR RM 40 80 120 160 200 1 VR = VR RM 0 40 80 120 160 200 0.1 Tamb - Ambient Temperature ( C ) 94 9176 Tj - Junction Temperature ( C ) Figure 2. Max. Average Forward Current vs. Ambient Temperature Figure 4. Reverse Current vs. Junction Temperature www.vishay.de * FaxBack +1-408-970-5600 2 (4) Document Number 86049 Rev. 2, 24-Jun-98 BYW52...BYW56 Vishay Telefunken 100 CD - Diode Capacitance ( pF ) Tj = 25C IF - Forward Current ( A ) 10 Tj = 175C 80 f = 0.47 MHz Tj = 25C 60 1 40 0.1 20 0.01 0 94 9175 0 0.6 1.2 1.8 2.4 3.0 94 9177 0.1 1 10 100 VF - Forward Voltage ( V ) VR - Reverse Voltage ( V ) Figure 5. Typ. Forward Current vs. Forward Voltage Figure 6. Typ. Diode Capacitance vs. Reverse Voltage Z thp - Thermal Resistance for Pulse Cond. (K/W) 1000 VR RM= 1000 V, RthJA=100K/W 100 tp/T=0.5 tp/T=0.2 10 tp/T=0.1 tp/T=0.05 tp/T=0.02 1 10-5 tp/T=0.01 10-4 10-3 10-2 10-1 100 101 Tamb= 60C Tamb= 70C Tamb= 100C 100 101 IFRM - Repetitive Peak Forward Current ( A ) 102 Tamb= 25C Tamb= 45C 94 9178 tp - Pulse Length ( s ) Figure 7. Thermal Response Dimensions in mm 3.6 max. Sintered Glass Case SOD 57 Weight max. 0.5 g Cathode Identification technical drawings according to DIN specifications 94 9538 0.82 max. 26 min. 4.2 max. 26 min. Document Number 86049 Rev. 2, 24-Jun-98 www.vishay.de * FaxBack +1-408-970-5600 3 (4) BYW52...BYW56 Vishay Telefunken Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances ( ODSs ). The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency ( EPA ) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423 www.vishay.de * FaxBack +1-408-970-5600 4 (4) Document Number 86049 Rev. 2, 24-Jun-98 |
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